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An simple model for the simulation of the electrical behaviour of several types of junction controlled field‐effect transistors is proposed. It is based on the calculation of the carrier concentration in the channel by means of a self‐consistent solution of Schrödinger and Poisson's equation in the direction perpendicular to the current flow. Based on the carrier concentration the dc, the small‐signal, and also the noise properties of the devices may be simulated. The calculated characteristics of a sub‐quarter micron gate GaAs MESFET, a δ‐doped GaAs FET and a Velocity Modulation Transistor will be presented and discussed.